Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation

In this paper, the effectiveness of ultra-low-energy ion implantation as a means of defect engineering in graphene was explored through the measurement of Scanning Kelvin Probe Microscopy (SKPM) and Raman spectroscopy, with boron (B) and helium (He) ions being implanted into monolayer graphene sampl...

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Detalles Bibliográficos
Autores principales: Junge, Felix, Auge, Manuel, Zarkua, Zviadi, Hofsäss, Hans
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9964514/
https://www.ncbi.nlm.nih.gov/pubmed/36839025
http://dx.doi.org/10.3390/nano13040658

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9964514/
https://www.ncbi.nlm.nih.gov/pubmed/36839025
http://dx.doi.org/10.3390/nano13040658

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