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Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation
In this paper, the effectiveness of ultra-low-energy ion implantation as a means of defect engineering in graphene was explored through the measurement of Scanning Kelvin Probe Microscopy (SKPM) and Raman spectroscopy, with boron (B) and helium (He) ions being implanted into monolayer graphene sampl...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9964514/ https://www.ncbi.nlm.nih.gov/pubmed/36839025 http://dx.doi.org/10.3390/nano13040658 |