Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes †

Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures wer...

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Detalles Bibliográficos
Autores principales: Armalytė, Simona, Glemža, Justinas, Jonkus, Vytautas, Pralgauskaitė, Sandra, Matukas, Jonas, Pūkienė, Simona, Zelioli, Andrea, Dudutienė, Evelina, Naujokaitis, Arnas, Bičiūnas, Andrius, Čechavičius, Bronislovas, Butkutė, Renata
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9965910/
https://www.ncbi.nlm.nih.gov/pubmed/36850880
http://dx.doi.org/10.3390/s23042282

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9965910/
https://www.ncbi.nlm.nih.gov/pubmed/36850880
http://dx.doi.org/10.3390/s23042282

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