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Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes †
Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures wer...
Autores principales: | Armalytė, Simona, Glemža, Justinas, Jonkus, Vytautas, Pralgauskaitė, Sandra, Matukas, Jonas, Pūkienė, Simona, Zelioli, Andrea, Dudutienė, Evelina, Naujokaitis, Arnas, Bičiūnas, Andrius, Čechavičius, Bronislovas, Butkutė, Renata |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9965910/ https://www.ncbi.nlm.nih.gov/pubmed/36850880 http://dx.doi.org/10.3390/s23042282 |
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