Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories

In this study, the bipolar switching properties and electrical conduction behaviors of the ITO thin films RRAM devices were investigated. For the transparent RRAM devices structure, indium tin oxide thin films were deposited by using the RF magnetron sputtering method on the ITO/glass substrate. For...

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Detalles Bibliográficos
Autores principales: Chen, Kai-Huang, Cheng, Chien-Min, Chen, Mei-Li, Pan, Yi-Yun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966100/
https://www.ncbi.nlm.nih.gov/pubmed/36839057
http://dx.doi.org/10.3390/nano13040688

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966100/
https://www.ncbi.nlm.nih.gov/pubmed/36839057
http://dx.doi.org/10.3390/nano13040688

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