Two-Dimensional Octuple-Atomic-Layer M(2)Si(2)N(4) (M = Al, Ga and In) with Long Carrier Lifetime

Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M [Formula: see text] Si...

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Detalles Bibliográficos
Autores principales: Ding, Yimin, Xue, Kui, Zhang, Jing, Yan, Luo, Li, Qiaoqiao, Yao, Yisen, Zhou, Liujiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966885/
https://www.ncbi.nlm.nih.gov/pubmed/36838105
http://dx.doi.org/10.3390/mi14020405

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966885/
https://www.ncbi.nlm.nih.gov/pubmed/36838105
http://dx.doi.org/10.3390/mi14020405

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