Cargando…
Two-Dimensional Octuple-Atomic-Layer M(2)Si(2)N(4) (M = Al, Ga and In) with Long Carrier Lifetime
Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M [Formula: see text] Si...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966885/ https://www.ncbi.nlm.nih.gov/pubmed/36838105 http://dx.doi.org/10.3390/mi14020405 |