Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask

Epitaxial lateral overgrowth (ELO) of GaN epilayers on a sapphire substrate was studied by using a laser-patterned graphene interlayer. Monolayer graphene was transferred onto the sapphire substrate using a wet transfer technique, and its quality was confirmed by Raman spectroscopy. The graphene lay...

Descripción completa

Detalles Bibliográficos
Autores principales: Kadys, Arūnas, Mickevičius, Jūras, Badokas, Kazimieras, Strumskis, Simonas, Vanagas, Egidijus, Podlipskas, Žydrūnas, Ignatjev, Ilja, Malinauskas, Tadas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966900/
https://www.ncbi.nlm.nih.gov/pubmed/36839152
http://dx.doi.org/10.3390/nano13040784

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966900/
https://www.ncbi.nlm.nih.gov/pubmed/36839152
http://dx.doi.org/10.3390/nano13040784

Ejemplares similares