All-Water-Driven High-k HfO(2) Gate Dielectrics and Applications in Thin Film Transistors

In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In(2)O(3)/HfO(2) thin film transistor (TFT). All the electrical properties of In(2)O(3) based on HfO(2) were systematically a...

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Detalles Bibliográficos
Autores principales: Alam, Fakhari, He, Gang, Yan, Jin, Wang, Wenhao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966958/
https://www.ncbi.nlm.nih.gov/pubmed/36839062
http://dx.doi.org/10.3390/nano13040694

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966958/
https://www.ncbi.nlm.nih.gov/pubmed/36839062
http://dx.doi.org/10.3390/nano13040694

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