H(2) Plasma and PMA Effects on PEALD-Al(2)O(3) Films with Different O(2) Plasma Exposure Times for CIS Passivation Layers

In this study, the electrical properties of Al(2)O(3) film were analyzed and optimized to improve the properties of the passivation layer of CMOS image sensors (CISs). During Al(2)O(3) deposition processing, the O(2) plasma exposure time was adjusted, and H(2) plasma treatment as well as post-metall...

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Detalles Bibliográficos
Autores principales: An, Jehyun, Choi, Kyeongkeun, Park, Jongseo, Kang, Bohyeon, You, Hyunseo, Ahn, Sungmin, Baek, Rockhyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9967181/
https://www.ncbi.nlm.nih.gov/pubmed/36839099
http://dx.doi.org/10.3390/nano13040731

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9967181/
https://www.ncbi.nlm.nih.gov/pubmed/36839099
http://dx.doi.org/10.3390/nano13040731

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