Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method

This study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-mode equipment based on atomic layer deposition and pla...

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Detalles Bibliográficos
Autores principales: Lin, Shih-Chin, Wang, Ching-Chiun, Tien, Chuen-Lin, Tung, Fu-Ching, Wang, Hsuan-Fu, Lai, Shih-Hsiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9967533/
https://www.ncbi.nlm.nih.gov/pubmed/36837979
http://dx.doi.org/10.3390/mi14020279

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9967533/
https://www.ncbi.nlm.nih.gov/pubmed/36837979
http://dx.doi.org/10.3390/mi14020279

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