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Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method
This study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-mode equipment based on atomic layer deposition and pla...
Autores principales: | Lin, Shih-Chin, Wang, Ching-Chiun, Tien, Chuen-Lin, Tung, Fu-Ching, Wang, Hsuan-Fu, Lai, Shih-Hsiang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9967533/ https://www.ncbi.nlm.nih.gov/pubmed/36837979 http://dx.doi.org/10.3390/mi14020279 |
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