Improvements in 2D p-type WSe(2) transistors towards ultimate CMOS scaling

This paper provides comprehensive experimental analysis relating to improvements in the two-dimensional (2D) p-type metal–oxide–semiconductor (PMOS) field effect transistors (FETs) by pure van der Waals (vdW) contacts on few-layer tungsten diselenide (WSe(2)) with high-k metal gate (HKMG) stacks. Ou...

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Detalles Bibliográficos
Autores principales: Patoary, Naim Hossain, Xie, Jing, Zhou, Guantong, Al Mamun, Fahad, Sayyad, Mohammed, Tongay, Sefaattin, Esqueda, Ivan Sanchez
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9971212/
https://www.ncbi.nlm.nih.gov/pubmed/36849724
http://dx.doi.org/10.1038/s41598-023-30317-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9971212/
https://www.ncbi.nlm.nih.gov/pubmed/36849724
http://dx.doi.org/10.1038/s41598-023-30317-4

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