Cargando…

Improvements in 2D p-type WSe(2) transistors towards ultimate CMOS scaling

This paper provides comprehensive experimental analysis relating to improvements in the two-dimensional (2D) p-type metal–oxide–semiconductor (PMOS) field effect transistors (FETs) by pure van der Waals (vdW) contacts on few-layer tungsten diselenide (WSe(2)) with high-k metal gate (HKMG) stacks. Ou...

Descripción completa

Detalles Bibliográficos
Autores principales:	Patoary, Naim Hossain, Xie, Jing, Zhou, Guantong, Al Mamun, Fahad, Sayyad, Mohammed, Tongay, Sefaattin, Esqueda, Ivan Sanchez
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9971212/ https://www.ncbi.nlm.nih.gov/pubmed/36849724 http://dx.doi.org/10.1038/s41598-023-30317-4

Ejemplares similares

Observation of ultralong valley lifetime in WSe(2)/MoS(2) heterostructures
por: Kim, Jonghwan, et al.
Publicado: (2017)

Ultimate limit in size and performance of WSe(2) vertical diodes
por: Nazir, Ghazanfar, et al.
Publicado: (2018)

Charge-tuneable biexciton complexes in monolayer WSe(2)
por: Barbone, Matteo, et al.
Publicado: (2018)

Polarity control in WSe(2) double-gate transistors
por: Resta, Giovanni V., et al.
Publicado: (2016)

Emerging photoluminescence from the dark-exciton phonon replica in monolayer WSe(2)
por: Li, Zhipeng, et al.
Publicado: (2019)

Phonon-exciton Interactions in WSe(2) under a quantizing magnetic field
por: Li, Zhipeng, et al.
Publicado: (2020)

Strong interaction between interlayer excitons and correlated electrons in WSe(2)/WS(2) moiré superlattice
por: Miao, Shengnan, et al.
Publicado: (2021)

Anisotropy of impact ionization in WSe(2) field effect transistors
por: Kang, Taeho, et al.
Publicado: (2023)

Two dimensional semiconducting materials for ultimately scaled transistors
por: Wei, Tianyao, et al.
Publicado: (2022)

Author Correction: Emerging photoluminescence from the dark-exciton phonon replica in monolayer WSe(2)
por: Li, Zhipeng, et al.
Publicado: (2019)

Visualizing electron localization of WS(2)/WSe(2) moiré superlattices in momentum space
por: Stansbury, Conrad H., et al.
Publicado: (2021)

Spatial coherence of room-temperature monolayer WSe(2) exciton-polaritons in a trap
por: Shan, Hangyong, et al.
Publicado: (2021)

Gate-bias instability of few-layer WSe(2) field effect transistors
por: Wen, Shaofeng, et al.
Publicado: (2021)

A steep switching WSe(2) impact ionization field-effect transistor
por: Choi, Haeju, et al.
Publicado: (2022)

Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure
por: Müller, M. R., et al.
Publicado: (2016)

Environmental Effects on the Electrical Characteristics of Back-Gated WSe(2) Field-Effect Transistors
por: Urban, Francesca, et al.
Publicado: (2018)

Poole–Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS Transistor
por: Wong, Hei, et al.
Publicado: (2023)

Hall and field-effect mobilities in few layered p-WSe(2) field-effect transistors
por: Pradhan, N. R., et al.
Publicado: (2015)

Selective Electron Beam Patterning of Oxygen‐Doped WSe(2) for Seamless Lateral Junction Transistors
por: Ngo, Tien Dat, et al.
Publicado: (2022)

Pressure coefficients for direct optical transitions in MoS(2), MoSe(2), WS(2), and WSe(2) crystals and semiconductor to metal transitions
por: Dybała, F., et al.
Publicado: (2016)

Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe(2) Field-Effect Transistors
por: Seo, Junseok, et al.
Publicado: (2019)

Light‐Driven WSe(2)‐ZnO Junction Field‐Effect Transistors for High‐Performance Photodetection
por: Guo, Nan, et al.
Publicado: (2019)

An application-specific image processing array based on WSe(2) transistors with electrically switchable logic functions
por: Zeng, Senfeng, et al.
Publicado: (2022)

Mixed Dimensional ZnO/WSe(2) Piezo-gated Transistor with Active Millinewton Force Sensing
por: Geng, Yulin, et al.
Publicado: (2022)

Precise and Prompt Analyte Detection via Ordered Orientation of Receptor in WSe(2)-Based Field Effect Transistor
por: Zafar, Muhammad Shahzad, et al.
Publicado: (2022)

Evidence for moiré intralayer excitons in twisted WSe(2)/WSe(2) homobilayer superlattices
por: Wu, Biao, et al.
Publicado: (2022)

Wafer-Scale Graphene Field-Effect Transistor Biosensor Arrays with Monolithic CMOS Readout
por: Soikkeli, Miika, et al.
Publicado: (2023)

Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS(2), MoSe(2), MoTe(2), WS(2), and WSe(2) Crystals
por: Kopaczek, J., et al.
Publicado: (2022)

CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization
por: Tran, Duy Phu, et al.
Publicado: (2018)

Stabilizing the Inverted Phase of a WSe(2)/BLG/WSe(2) Heterostructure via Hydrostatic Pressure
por: Kedves, Máté, et al.
Publicado: (2023)

Valley depolarization in monolayer WSe2
por: Yan, Tengfei, et al.
Publicado: (2015)

The valley Nernst effect in WSe(2)
por: Dau, Minh Tuan, et al.
Publicado: (2019)

Radiation-induced edge effects in deep submicron CMOS transistors
por: Faccio, F, et al.
Publicado: (2005)

High-Performance Few-layer Mo-doped ReSe(2) Nanosheet Photodetectors
por: Yang, Shengxue, et al.
Publicado: (2014)

Synthesis and Tribological Properties of WSe(2)Nanorods
por: Yang, Jinghai, et al.
Publicado: (2008)

Evidence of indirect gap in monolayer WSe(2)
por: Hsu, Wei-Ting, et al.
Publicado: (2017)

Selective Growth of WSe(2) with Graphene Contacts
por: Lin, Yu-Ting, et al.
Publicado: (2020)

Efficient phonon cascades in WSe(2) monolayers
por: Paradisanos, Ioannis, et al.
Publicado: (2021)

Atomic-scale mapping of hydrophobic layers on graphene and few-layer MoS(2) and WSe(2) in water
por: Uhlig, Manuel R., et al.
Publicado: (2019)

CMOS-based carbon nanotube pass-transistor logic integrated circuits
por: Ding, Li, et al.
Publicado: (2012)

Cannot write session to /tmp/vufind_sessions/sess_aan583i1qssoq3iuqm5u1mvmd6