Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO(3)-based multilayer capacitors

Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhu, Li-Feng, Deng, Shiqing, Zhao, Lei, Li, Gen, Wang, Qi, Li, Linhai, Yan, Yongke, Qi, He, Zhang, Bo-Ping, Chen, Jun, Li, Jing-Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9978025/
https://www.ncbi.nlm.nih.gov/pubmed/36859413
http://dx.doi.org/10.1038/s41467-023-36919-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9978025/
https://www.ncbi.nlm.nih.gov/pubmed/36859413
http://dx.doi.org/10.1038/s41467-023-36919-w

Ejemplares similares