Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO(3)-based multilayer capacitors

Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for practical applications of dielectric capacitors. Herein, we propose a heterovalent-doping-enabled atom-displacement fluctuation strategy for the design of low-atom-displacements regions in the antiferroelectric matrix to achieve the increase in breakdown strength and enhancement of the energy-storage density for AgNbO(3)-based multilayer capacitors. An ultrahigh breakdown strength ~1450 kV·cm(−1) is realized in the Sm(0.05)Ag(0.85)Nb(0.7)Ta(0.3)O(3) multilayer capacitors, especially with an ultrahigh U(rec) ~14 J·cm(−3), excellent η ~ 85% and P(D,max) ~ 102.84 MW·cm(−3), manifesting a breakthrough in the comprehensive energy storage performance for lead-free antiferroelectric capacitors. This work offers a good paradigm for improving the energy storage properties of antiferroelectric multilayer capacitors to meet the demanding requirements of advanced energy storage applications.