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Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO(3)-based multilayer capacitors

Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for...

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Detalles Bibliográficos
Autores principales:	Zhu, Li-Feng, Deng, Shiqing, Zhao, Lei, Li, Gen, Wang, Qi, Li, Linhai, Yan, Yongke, Qi, He, Zhang, Bo-Ping, Chen, Jun, Li, Jing-Feng
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9978025/ https://www.ncbi.nlm.nih.gov/pubmed/36859413 http://dx.doi.org/10.1038/s41467-023-36919-w

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