Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide

[Image: see text] Hafnium oxide is an outstanding candidate for next-generation nonvolatile memory solutions such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access memory). A key parameter for OxRAM is the controlled oxygen deficiency in HfO(2-x) which eventually is asso...

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Detalles Bibliográficos
Autores principales: Kaiser, Nico, Song, Young-Joon, Vogel, Tobias, Piros, Eszter, Kim, Taewook, Schreyer, Philipp, Petzold, Stefan, Valentí, Roser, Alff, Lambert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9979600/
https://www.ncbi.nlm.nih.gov/pubmed/36873259
http://dx.doi.org/10.1021/acsaelm.2c01255

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9979600/
https://www.ncbi.nlm.nih.gov/pubmed/36873259
http://dx.doi.org/10.1021/acsaelm.2c01255

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