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Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide
[Image: see text] Hafnium oxide is an outstanding candidate for next-generation nonvolatile memory solutions such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access memory). A key parameter for OxRAM is the controlled oxygen deficiency in HfO(2-x) which eventually is asso...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9979600/ https://www.ncbi.nlm.nih.gov/pubmed/36873259 http://dx.doi.org/10.1021/acsaelm.2c01255 |