Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf(0.5)Zr(0.5)O(2) Tunnel Junctions

[Image: see text] The recent discovery of ferroelectricity in doped HfO(2) has opened perspectives on the development of memristors based on ferroelectric switching, including ferroelectric tunnel junctions. In these devices, conductive channels are formed in a similar manner to junctions based on n...

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Detalles Bibliográficos
Autores principales: Long, Xiao, Tan, Huan, Sánchez, Florencio, Fina, Ignasi, Fontcuberta, Josep
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9979785/
https://www.ncbi.nlm.nih.gov/pubmed/36873260
http://dx.doi.org/10.1021/acsaelm.2c01186

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9979785/
https://www.ncbi.nlm.nih.gov/pubmed/36873260
http://dx.doi.org/10.1021/acsaelm.2c01186

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