Room-temperature bonding of Al(2)O(3) thin films deposited using atomic layer deposition

In this study, room-temperature wafer bonding of Al(2)O(3) thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) method. Transmission electron microscopy (TEM) observations indicated that these room-tem...

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Detalles Bibliográficos
Autores principales: Takakura, Ryo, Murakami, Seigo, Watanabe, Kaname, Takigawa, Ryo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9984445/
https://www.ncbi.nlm.nih.gov/pubmed/36869072
http://dx.doi.org/10.1038/s41598-023-30376-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9984445/
https://www.ncbi.nlm.nih.gov/pubmed/36869072
http://dx.doi.org/10.1038/s41598-023-30376-7

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