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Room-temperature bonding of Al(2)O(3) thin films deposited using atomic layer deposition

In this study, room-temperature wafer bonding of Al(2)O(3) thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) method. Transmission electron microscopy (TEM) observations indicated that these room-tem...

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Detalles Bibliográficos
Autores principales:	Takakura, Ryo, Murakami, Seigo, Watanabe, Kaname, Takigawa, Ryo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9984445/ https://www.ncbi.nlm.nih.gov/pubmed/36869072 http://dx.doi.org/10.1038/s41598-023-30376-7

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