Sub-bandgap near-infrared photovoltaic response in Au/Al(2)O(3)/n-Si metal–insulator–semiconductor structure by plasmon-enhanced internal photoemission

Silicon sub-bandgap near-infrared (NIR) (λ > 1100 nm) photovoltaic (PV) response by plasmon-enhanced internal photoemission was investigated. The Si sub-bandgap NIR PV response, which remains unexploited in Schottky junction-like solar cell device, was examined using nanometer sized Au/Al(2)O(3)/...

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Detalles Bibliográficos
Autores principales: Dai, Xiyuan, Wu, Li, Yu, Liang, Yu, Zhiyuan, Ma, Fengyang, Zhang, Yuchen, Yang, Yanru, Sun, Jian, Lu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9992651/
https://www.ncbi.nlm.nih.gov/pubmed/36881340
http://dx.doi.org/10.1186/s11671-023-03818-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9992651/
https://www.ncbi.nlm.nih.gov/pubmed/36881340
http://dx.doi.org/10.1186/s11671-023-03818-4

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