Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process

A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate scaled electronic devices with complex organic se...

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Detalles Bibliográficos
Autores principales: Lee, Yongsu, Kwon, Heejin, Kim, Seung-Mo, Lee, Ho-In, Kim, Kiyung, Lee, Hae-Won, Kim, So-Young, Hwang, Hyeon Jun, Lee, Byoung Hun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2023
Materias:
Full Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9998751/
https://www.ncbi.nlm.nih.gov/pubmed/36894801
http://dx.doi.org/10.1186/s40580-023-00362-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9998751/
https://www.ncbi.nlm.nih.gov/pubmed/36894801
http://dx.doi.org/10.1186/s40580-023-00362-w

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