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C- and O-Band Dual-Polarization Fiber-to-Chip Grating Couplers for Silicon Nitride Photonics

[Image: see text] Highly efficient coupling of light from an optical fiber to silicon nitride (SiN) photonic integrated circuits (PICs) is experimentally demonstrated with simple and fabrication-tolerant grating couplers (GC). Fully etched amorphous silicon gratings are formed on top of foundry-prod...

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Detalles Bibliográficos
Autores principales: Kohli, Manuel, Chelladurai, Daniel, Vukovic, Boris, Moor, David, Bisang, Dominik, Keller, Killian, Messner, Andreas, Buriakova, Tatiana, Zervas, Michael, Fedoryshyn, Yuriy, Koch, Ueli, Leuthold, Juerg
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10515627/
https://www.ncbi.nlm.nih.gov/pubmed/37743947
http://dx.doi.org/10.1021/acsphotonics.3c00834
Descripción
Sumario:[Image: see text] Highly efficient coupling of light from an optical fiber to silicon nitride (SiN) photonic integrated circuits (PICs) is experimentally demonstrated with simple and fabrication-tolerant grating couplers (GC). Fully etched amorphous silicon gratings are formed on top of foundry-produced SiN PICs in a back-end-of-the-line (BEOL) process, which is compatible with 248 nm deep UV lithography. Metallic back reflectors are introduced to enhance the coupling efficiency (CE) from −1.11 to −0.44 dB in simulation and from −2.2 to −1.4 dB in experiments for the TE polarization in the C-band. Furthermore, these gratings can be optimized to couple both TE and TM polarizations with a CE below −3 dB and polarization-dependent losses under 1 dB over a wavelength range of 40 nm in the O-band. This elegant approach offers a simple solution for the realization of compact and, at the same time, highly efficient coupling schemes in SiN PICs.