Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G(0) = 4e(2)/h has been achieved in field-effect transistors...

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Detalles Bibliográficos
Autores principales: Brady, Gerald J., Way, Austin J., Safron, Nathaniel S., Evensen, Harold T., Gopalan, Padma, Arnold, Michael S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2016
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5010372/
https://www.ncbi.nlm.nih.gov/pubmed/27617293
http://dx.doi.org/10.1126/sciadv.1601240

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5010372/
https://www.ncbi.nlm.nih.gov/pubmed/27617293
http://dx.doi.org/10.1126/sciadv.1601240

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