Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks

[Image: see text] Selective-area growth is a promising technique for enabling of the fabrication of the scalable III–V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain...

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Autores principales: Aseev, Pavel, Fursina, Alexandra, Boekhout, Frenk, Krizek, Filip, Sestoft, Joachim E., Borsoi, Francesco, Heedt, Sebastian, Wang, Guanzhong, Binci, Luca, Martí-Sánchez, Sara, Swoboda, Timm, Koops, René, Uccelli, Emanuele, Arbiol, Jordi, Krogstrup, Peter, Kouwenhoven, Leo P., Caroff, Philippe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6331184/
https://www.ncbi.nlm.nih.gov/pubmed/30521341
http://dx.doi.org/10.1021/acs.nanolett.8b03733
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author Aseev, Pavel
Fursina, Alexandra
Boekhout, Frenk
Krizek, Filip
Sestoft, Joachim E.
Borsoi, Francesco
Heedt, Sebastian
Wang, Guanzhong
Binci, Luca
Martí-Sánchez, Sara
Swoboda, Timm
Koops, René
Uccelli, Emanuele
Arbiol, Jordi
Krogstrup, Peter
Kouwenhoven, Leo P.
Caroff, Philippe
author_facet Aseev, Pavel
Fursina, Alexandra
Boekhout, Frenk
Krizek, Filip
Sestoft, Joachim E.
Borsoi, Francesco
Heedt, Sebastian
Wang, Guanzhong
Binci, Luca
Martí-Sánchez, Sara
Swoboda, Timm
Koops, René
Uccelli, Emanuele
Arbiol, Jordi
Krogstrup, Peter
Kouwenhoven, Leo P.
Caroff, Philippe
author_sort Aseev, Pavel
collection PubMed
description [Image: see text] Selective-area growth is a promising technique for enabling of the fabrication of the scalable III–V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III–V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III–V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov–Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance.
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spelling pubmed-63311842019-01-17 Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks Aseev, Pavel Fursina, Alexandra Boekhout, Frenk Krizek, Filip Sestoft, Joachim E. Borsoi, Francesco Heedt, Sebastian Wang, Guanzhong Binci, Luca Martí-Sánchez, Sara Swoboda, Timm Koops, René Uccelli, Emanuele Arbiol, Jordi Krogstrup, Peter Kouwenhoven, Leo P. Caroff, Philippe Nano Lett [Image: see text] Selective-area growth is a promising technique for enabling of the fabrication of the scalable III–V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III–V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III–V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov–Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance. American Chemical Society 2018-12-06 2019-01-09 /pmc/articles/PMC6331184/ /pubmed/30521341 http://dx.doi.org/10.1021/acs.nanolett.8b03733 Text en Copyright © 2018 American Chemical Society This is an open access article published under a Creative Commons Non-Commercial No Derivative Works (CC-BY-NC-ND) Attribution License (http://pubs.acs.org/page/policy/authorchoice_ccbyncnd_termsofuse.html) , which permits copying and redistribution of the article, and creation of adaptations, all for non-commercial purposes.
spellingShingle Aseev, Pavel
Fursina, Alexandra
Boekhout, Frenk
Krizek, Filip
Sestoft, Joachim E.
Borsoi, Francesco
Heedt, Sebastian
Wang, Guanzhong
Binci, Luca
Martí-Sánchez, Sara
Swoboda, Timm
Koops, René
Uccelli, Emanuele
Arbiol, Jordi
Krogstrup, Peter
Kouwenhoven, Leo P.
Caroff, Philippe
Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks
title Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks
title_full Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks
title_fullStr Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks
title_full_unstemmed Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks
title_short Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks
title_sort selectivity map for molecular beam epitaxy of advanced iii–v quantum nanowire networks
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6331184/
https://www.ncbi.nlm.nih.gov/pubmed/30521341
http://dx.doi.org/10.1021/acs.nanolett.8b03733
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