Cargando…
Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)
Nanoholes with a depth in the range of tens of nanometers can be formed on GaAs(001) surfaces at a temperature of 500°C by local etching after Ga droplet formation. In this work, we demonstrate that the local etching or nanodrilling process starts when the Ga droplets are exposed to arsenic. The ess...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4071335/ https://www.ncbi.nlm.nih.gov/pubmed/24994962 http://dx.doi.org/10.1186/1556-276X-9-309 |