Design, Characterization and Analysis of a 0.35 μm CMOS SPAD

Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs de...

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Detalles Bibliográficos
Autores principales: Jradi, Khalil, Pellion, Denis, Ginhac, Dominique
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4299038/
https://www.ncbi.nlm.nih.gov/pubmed/25470491
http://dx.doi.org/10.3390/s141222773
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author Jradi, Khalil
Pellion, Denis
Ginhac, Dominique
author_facet Jradi, Khalil
Pellion, Denis
Ginhac, Dominique
author_sort Jradi, Khalil
collection PubMed
description Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 μm down to 5 μm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD.
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spelling pubmed-42990382015-01-26 Design, Characterization and Analysis of a 0.35 μm CMOS SPAD Jradi, Khalil Pellion, Denis Ginhac, Dominique Sensors (Basel) Article Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 μm down to 5 μm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD. MDPI 2014-12-01 /pmc/articles/PMC4299038/ /pubmed/25470491 http://dx.doi.org/10.3390/s141222773 Text en © 2014 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Jradi, Khalil
Pellion, Denis
Ginhac, Dominique
Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
title Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
title_full Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
title_fullStr Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
title_full_unstemmed Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
title_short Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
title_sort design, characterization and analysis of a 0.35 μm cmos spad
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4299038/
https://www.ncbi.nlm.nih.gov/pubmed/25470491
http://dx.doi.org/10.3390/s141222773
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