Impact of Line Edge Roughness on ReRAM Uniformity and Scaling

We investigate the effects of Line Edge Roughness (LER) of electrode lines on the uniformity of Resistive Random Access Memory (ReRAM) device areas in cross-point architectures. To this end, a modeling approach is implemented based on the generation of 2D cross-point patterns with predefined and con...

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Detalles Bibliográficos
Autores principales: Constantoudis, Vassilios, Papavieros, George, Karakolis, Panagiotis, Khiat, Ali, Prodromakis, Themistoklis, Dimitrakis, Panagiotis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926851/
https://www.ncbi.nlm.nih.gov/pubmed/31801205
http://dx.doi.org/10.3390/ma12233972

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926851/
https://www.ncbi.nlm.nih.gov/pubmed/31801205
http://dx.doi.org/10.3390/ma12233972

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