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Influence of Surface Damage and Bulk Defects on the Interstrip Isolation of p-type Silicon Strip Sensors
Silicon strip sensors of upcoming tracking detectors in high luminosity colliders usually consist of a p-doped bulk with n-type strip implants. The general consensus is that such a design requires an additional interstrip isolation structure such as a p-stop implant. If there is no additional implan...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2020
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2798346 |