Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is...

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Detalles Bibliográficos
Autores principales: Kumar, Ashutosh, Heilmann, M., Latzel, Michael, Kapoor, Raman, Sharma, Intu, Göbelt, M., Christiansen, Silke H., Kumar, Vikram, Singh, Rajendra
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4901317/
https://www.ncbi.nlm.nih.gov/pubmed/27282258
http://dx.doi.org/10.1038/srep27553

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4901317/
https://www.ncbi.nlm.nih.gov/pubmed/27282258
http://dx.doi.org/10.1038/srep27553

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