Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a na...

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Detalles Bibliográficos
Autores principales: Zhao, Jie, Hu, Hongpo, Lei, Yu, Wan, Hui, Gong, Liyan, Zhou, Shengjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915436/
https://www.ncbi.nlm.nih.gov/pubmed/31744248
http://dx.doi.org/10.3390/nano9111634