Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the...

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Autores principales: Sun, Tao, Luo, Xiaorong, Wei, Jie, Yang, Chao, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7364695/
https://www.ncbi.nlm.nih.gov/pubmed/32676687
http://dx.doi.org/10.1186/s11671-020-03376-z
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author Sun, Tao
Luo, Xiaorong
Wei, Jie
Yang, Chao
Zhang, Bo
author_facet Sun, Tao
Luo, Xiaorong
Wei, Jie
Yang, Chao
Zhang, Bo
author_sort Sun, Tao
collection PubMed
description An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (V(ON)). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low V(ON) is obtained. The fabricated SBD exhibits a BV of 1109 V with anode-to-cathode distance (L(AC)) of 11 μm. The fabricated SBDs achieve a low V(ON) of 0.68 V with good uniformity, a high on/off current ratio ∼ 10(10) at room temperature, a low specific on-resistance (R(ON,SP)) of 1.17 mΩ cm(2), and a high Baliga’s figure-of-merit (FOM) of 1051 MW/cm(2).
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spelling pubmed-73646952020-07-21 Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction Sun, Tao Luo, Xiaorong Wei, Jie Yang, Chao Zhang, Bo Nanoscale Res Lett Nano Express An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (V(ON)). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low V(ON) is obtained. The fabricated SBD exhibits a BV of 1109 V with anode-to-cathode distance (L(AC)) of 11 μm. The fabricated SBDs achieve a low V(ON) of 0.68 V with good uniformity, a high on/off current ratio ∼ 10(10) at room temperature, a low specific on-resistance (R(ON,SP)) of 1.17 mΩ cm(2), and a high Baliga’s figure-of-merit (FOM) of 1051 MW/cm(2). Springer US 2020-07-16 /pmc/articles/PMC7364695/ /pubmed/32676687 http://dx.doi.org/10.1186/s11671-020-03376-z Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Sun, Tao
Luo, Xiaorong
Wei, Jie
Yang, Chao
Zhang, Bo
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
title Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
title_full Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
title_fullStr Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
title_full_unstemmed Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
title_short Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
title_sort theoretical and experimental study on algan/gan schottky barrier diode on si substrate with double-heterojunction
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7364695/
https://www.ncbi.nlm.nih.gov/pubmed/32676687
http://dx.doi.org/10.1186/s11671-020-03376-z
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