Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Springer US
2020
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7364695/ https://www.ncbi.nlm.nih.gov/pubmed/32676687 http://dx.doi.org/10.1186/s11671-020-03376-z |
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author | Sun, Tao Luo, Xiaorong Wei, Jie Yang, Chao Zhang, Bo |
author_facet | Sun, Tao Luo, Xiaorong Wei, Jie Yang, Chao Zhang, Bo |
author_sort | Sun, Tao |
collection | PubMed |
description | An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (V(ON)). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low V(ON) is obtained. The fabricated SBD exhibits a BV of 1109 V with anode-to-cathode distance (L(AC)) of 11 μm. The fabricated SBDs achieve a low V(ON) of 0.68 V with good uniformity, a high on/off current ratio ∼ 10(10) at room temperature, a low specific on-resistance (R(ON,SP)) of 1.17 mΩ cm(2), and a high Baliga’s figure-of-merit (FOM) of 1051 MW/cm(2). |
format | Online Article Text |
id | pubmed-7364695 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-73646952020-07-21 Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction Sun, Tao Luo, Xiaorong Wei, Jie Yang, Chao Zhang, Bo Nanoscale Res Lett Nano Express An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (V(ON)). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low V(ON) is obtained. The fabricated SBD exhibits a BV of 1109 V with anode-to-cathode distance (L(AC)) of 11 μm. The fabricated SBDs achieve a low V(ON) of 0.68 V with good uniformity, a high on/off current ratio ∼ 10(10) at room temperature, a low specific on-resistance (R(ON,SP)) of 1.17 mΩ cm(2), and a high Baliga’s figure-of-merit (FOM) of 1051 MW/cm(2). Springer US 2020-07-16 /pmc/articles/PMC7364695/ /pubmed/32676687 http://dx.doi.org/10.1186/s11671-020-03376-z Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Nano Express Sun, Tao Luo, Xiaorong Wei, Jie Yang, Chao Zhang, Bo Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction |
title | Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction |
title_full | Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction |
title_fullStr | Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction |
title_full_unstemmed | Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction |
title_short | Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction |
title_sort | theoretical and experimental study on algan/gan schottky barrier diode on si substrate with double-heterojunction |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7364695/ https://www.ncbi.nlm.nih.gov/pubmed/32676687 http://dx.doi.org/10.1186/s11671-020-03376-z |
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