Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

[Image: see text] The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. In this work, the roles of atomic nitrogen (N)/hydrogen (H) in GaN film growth on...

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Detalles Bibliográficos
Autores principales: Tanide, Atsushi, Nakamura, Shohei, Horikoshi, Akira, Takatsuji, Shigeru, Kimura, Takahiro, Kinose, Kazuo, Nadahara, Soichi, Nishikawa, Masazumi, Ebe, Akinori, Ishikawa, Kenji, Oda, Osamu, Hori, Masaru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7581250/
https://www.ncbi.nlm.nih.gov/pubmed/33111004
http://dx.doi.org/10.1021/acsomega.0c03865

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7581250/
https://www.ncbi.nlm.nih.gov/pubmed/33111004
http://dx.doi.org/10.1021/acsomega.0c03865

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