High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics

Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf(0.25)Zr(0.75)O(2) (HfZ...

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Autores principales: He, Yuli, Zheng, Guang, Zhu, Bao, Wu, Xiaohan, Liu, Wen-Jun, Zhang, David Wei, Ding, Shi-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254242/
https://www.ncbi.nlm.nih.gov/pubmed/37299668
http://dx.doi.org/10.3390/nano13111765
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author He, Yuli
Zheng, Guang
Zhu, Bao
Wu, Xiaohan
Liu, Wen-Jun
Zhang, David Wei
Ding, Shi-Jin
author_facet He, Yuli
Zheng, Guang
Zhu, Bao
Wu, Xiaohan
Liu, Wen-Jun
Zhang, David Wei
Ding, Shi-Jin
author_sort He, Yuli
collection PubMed
description Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf(0.25)Zr(0.75)O(2) (HfZrO:Al) dielectrics together with an ultrathin (1 nm) Hf(0.5)Zr(0.5)O(2) underlying layer. By optimizing the Al concentration in the AFE layer with the help of accurate controllability of the atomic layer deposition technique, an ultrahigh ESD of 81.4 J cm(−3) and a perfect energy storage efficiency (ESE) of 82.9% are simultaneously achieved for the first time in the case of the Al/(Hf + Zr) ratio of 1/16. Meanwhile, both the ESD and ESE exhibit excellent electric field cycling endurance within 10(9) cycles under 5~5.5 MV cm(−1), and robust thermal stability up to 200 °C. Thus, the fabricated capacitor is very promising for on-chip energy storage applications due to favorable integratability with the standard complementary metal–oxide–semiconductor (CMOS) process.
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spelling pubmed-102542422023-06-10 High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics He, Yuli Zheng, Guang Zhu, Bao Wu, Xiaohan Liu, Wen-Jun Zhang, David Wei Ding, Shi-Jin Nanomaterials (Basel) Article Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf(0.25)Zr(0.75)O(2) (HfZrO:Al) dielectrics together with an ultrathin (1 nm) Hf(0.5)Zr(0.5)O(2) underlying layer. By optimizing the Al concentration in the AFE layer with the help of accurate controllability of the atomic layer deposition technique, an ultrahigh ESD of 81.4 J cm(−3) and a perfect energy storage efficiency (ESE) of 82.9% are simultaneously achieved for the first time in the case of the Al/(Hf + Zr) ratio of 1/16. Meanwhile, both the ESD and ESE exhibit excellent electric field cycling endurance within 10(9) cycles under 5~5.5 MV cm(−1), and robust thermal stability up to 200 °C. Thus, the fabricated capacitor is very promising for on-chip energy storage applications due to favorable integratability with the standard complementary metal–oxide–semiconductor (CMOS) process. MDPI 2023-05-30 /pmc/articles/PMC10254242/ /pubmed/37299668 http://dx.doi.org/10.3390/nano13111765 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
He, Yuli
Zheng, Guang
Zhu, Bao
Wu, Xiaohan
Liu, Wen-Jun
Zhang, David Wei
Ding, Shi-Jin
High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics
title High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics
title_full High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics
title_fullStr High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics
title_full_unstemmed High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics
title_short High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics
title_sort high performance on-chip energy storage capacitors with plasma-enhanced atomic layer-deposited hf(0.5)zr(0.5)o(2)/al-doped hf(0.25)zr(0.75)o(2) nanofilms as dielectrics
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254242/
https://www.ncbi.nlm.nih.gov/pubmed/37299668
http://dx.doi.org/10.3390/nano13111765
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