High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics
Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf(0.25)Zr(0.75)O(2) (HfZ...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254242/ https://www.ncbi.nlm.nih.gov/pubmed/37299668 http://dx.doi.org/10.3390/nano13111765 |
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author | He, Yuli Zheng, Guang Zhu, Bao Wu, Xiaohan Liu, Wen-Jun Zhang, David Wei Ding, Shi-Jin |
author_facet | He, Yuli Zheng, Guang Zhu, Bao Wu, Xiaohan Liu, Wen-Jun Zhang, David Wei Ding, Shi-Jin |
author_sort | He, Yuli |
collection | PubMed |
description | Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf(0.25)Zr(0.75)O(2) (HfZrO:Al) dielectrics together with an ultrathin (1 nm) Hf(0.5)Zr(0.5)O(2) underlying layer. By optimizing the Al concentration in the AFE layer with the help of accurate controllability of the atomic layer deposition technique, an ultrahigh ESD of 81.4 J cm(−3) and a perfect energy storage efficiency (ESE) of 82.9% are simultaneously achieved for the first time in the case of the Al/(Hf + Zr) ratio of 1/16. Meanwhile, both the ESD and ESE exhibit excellent electric field cycling endurance within 10(9) cycles under 5~5.5 MV cm(−1), and robust thermal stability up to 200 °C. Thus, the fabricated capacitor is very promising for on-chip energy storage applications due to favorable integratability with the standard complementary metal–oxide–semiconductor (CMOS) process. |
format | Online Article Text |
id | pubmed-10254242 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-102542422023-06-10 High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics He, Yuli Zheng, Guang Zhu, Bao Wu, Xiaohan Liu, Wen-Jun Zhang, David Wei Ding, Shi-Jin Nanomaterials (Basel) Article Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped Hf(0.25)Zr(0.75)O(2) (HfZrO:Al) dielectrics together with an ultrathin (1 nm) Hf(0.5)Zr(0.5)O(2) underlying layer. By optimizing the Al concentration in the AFE layer with the help of accurate controllability of the atomic layer deposition technique, an ultrahigh ESD of 81.4 J cm(−3) and a perfect energy storage efficiency (ESE) of 82.9% are simultaneously achieved for the first time in the case of the Al/(Hf + Zr) ratio of 1/16. Meanwhile, both the ESD and ESE exhibit excellent electric field cycling endurance within 10(9) cycles under 5~5.5 MV cm(−1), and robust thermal stability up to 200 °C. Thus, the fabricated capacitor is very promising for on-chip energy storage applications due to favorable integratability with the standard complementary metal–oxide–semiconductor (CMOS) process. MDPI 2023-05-30 /pmc/articles/PMC10254242/ /pubmed/37299668 http://dx.doi.org/10.3390/nano13111765 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article He, Yuli Zheng, Guang Zhu, Bao Wu, Xiaohan Liu, Wen-Jun Zhang, David Wei Ding, Shi-Jin High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics |
title | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics |
title_full | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics |
title_fullStr | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics |
title_full_unstemmed | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics |
title_short | High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics |
title_sort | high performance on-chip energy storage capacitors with plasma-enhanced atomic layer-deposited hf(0.5)zr(0.5)o(2)/al-doped hf(0.25)zr(0.75)o(2) nanofilms as dielectrics |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254242/ https://www.ncbi.nlm.nih.gov/pubmed/37299668 http://dx.doi.org/10.3390/nano13111765 |
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