Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an Al...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2011
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3237329/ https://www.ncbi.nlm.nih.gov/pubmed/22136595 http://dx.doi.org/10.1186/1556-276X-6-611 |
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author | Niu, Lang Hao, Zhibiao Hu, Jiannan Hu, Yibin Wang, Lai Luo, Yi |
author_facet | Niu, Lang Hao, Zhibiao Hu, Jiannan Hu, Yibin Wang, Lai Luo, Yi |
author_sort | Niu, Lang |
collection | PubMed |
description | The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively. |
format | Online Article Text |
id | pubmed-3237329 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2011 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-32373292011-12-21 Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control Niu, Lang Hao, Zhibiao Hu, Jiannan Hu, Yibin Wang, Lai Luo, Yi Nanoscale Res Lett Nano Express The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively. Springer 2011-12-02 /pmc/articles/PMC3237329/ /pubmed/22136595 http://dx.doi.org/10.1186/1556-276X-6-611 Text en Copyright ©2011 Niu et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Niu, Lang Hao, Zhibiao Hu, Jiannan Hu, Yibin Wang, Lai Luo, Yi Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control |
title | Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control |
title_full | Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control |
title_fullStr | Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control |
title_full_unstemmed | Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control |
title_short | Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control |
title_sort | improving the emission efficiency of mbe-grown gan/aln qds by strain control |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3237329/ https://www.ncbi.nlm.nih.gov/pubmed/22136595 http://dx.doi.org/10.1186/1556-276X-6-611 |
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