Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control

The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an Al...

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Detalles Bibliográficos
Autores principales: Niu, Lang, Hao, Zhibiao, Hu, Jiannan, Hu, Yibin, Wang, Lai, Luo, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3237329/
https://www.ncbi.nlm.nih.gov/pubmed/22136595
http://dx.doi.org/10.1186/1556-276X-6-611
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author Niu, Lang
Hao, Zhibiao
Hu, Jiannan
Hu, Yibin
Wang, Lai
Luo, Yi
author_facet Niu, Lang
Hao, Zhibiao
Hu, Jiannan
Hu, Yibin
Wang, Lai
Luo, Yi
author_sort Niu, Lang
collection PubMed
description The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively.
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spelling pubmed-32373292011-12-21 Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control Niu, Lang Hao, Zhibiao Hu, Jiannan Hu, Yibin Wang, Lai Luo, Yi Nanoscale Res Lett Nano Express The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively. Springer 2011-12-02 /pmc/articles/PMC3237329/ /pubmed/22136595 http://dx.doi.org/10.1186/1556-276X-6-611 Text en Copyright ©2011 Niu et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Niu, Lang
Hao, Zhibiao
Hu, Jiannan
Hu, Yibin
Wang, Lai
Luo, Yi
Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
title Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
title_full Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
title_fullStr Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
title_full_unstemmed Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
title_short Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
title_sort improving the emission efficiency of mbe-grown gan/aln qds by strain control
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3237329/
https://www.ncbi.nlm.nih.gov/pubmed/22136595
http://dx.doi.org/10.1186/1556-276X-6-611
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