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Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure

Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here,...

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Autores principales: Zhang, Siqing, Liu, Yan, Zhou, Jiuren, Ma, Meng, Gao, Anyuan, Zheng, Binjie, Li, Lingfei, Su, Xin, Han, Genquan, Zhang, Jincheng, Shi, Yi, Wang, Xiaomu, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7396413/
https://www.ncbi.nlm.nih.gov/pubmed/32743764
http://dx.doi.org/10.1186/s11671-020-03384-z
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author Zhang, Siqing
Liu, Yan
Zhou, Jiuren
Ma, Meng
Gao, Anyuan
Zheng, Binjie
Li, Lingfei
Su, Xin
Han, Genquan
Zhang, Jincheng
Shi, Yi
Wang, Xiaomu
Hao, Yue
author_facet Zhang, Siqing
Liu, Yan
Zhou, Jiuren
Ma, Meng
Gao, Anyuan
Zheng, Binjie
Li, Lingfei
Su, Xin
Han, Genquan
Zhang, Jincheng
Shi, Yi
Wang, Xiaomu
Hao, Yue
author_sort Zhang, Siqing
collection PubMed
description Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf(1-x)Zr(x)O(2) (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS(2)) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 10(7) and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (10(3) cycles) and retention (10(4) s) properties are also demonstrated. Our results demonstrate that the HZO/MoS(2) ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications.
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spelling pubmed-73964132020-08-13 Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure Zhang, Siqing Liu, Yan Zhou, Jiuren Ma, Meng Gao, Anyuan Zheng, Binjie Li, Lingfei Su, Xin Han, Genquan Zhang, Jincheng Shi, Yi Wang, Xiaomu Hao, Yue Nanoscale Res Lett Nano Express Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf(1-x)Zr(x)O(2) (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS(2)) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 10(7) and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (10(3) cycles) and retention (10(4) s) properties are also demonstrated. Our results demonstrate that the HZO/MoS(2) ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications. Springer US 2020-08-02 /pmc/articles/PMC7396413/ /pubmed/32743764 http://dx.doi.org/10.1186/s11671-020-03384-z Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Zhang, Siqing
Liu, Yan
Zhou, Jiuren
Ma, Meng
Gao, Anyuan
Zheng, Binjie
Li, Lingfei
Su, Xin
Han, Genquan
Zhang, Jincheng
Shi, Yi
Wang, Xiaomu
Hao, Yue
Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure
title Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure
title_full Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure
title_fullStr Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure
title_full_unstemmed Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure
title_short Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure
title_sort low voltage operating 2d mos(2) ferroelectric memory transistor with hf(1-x)zr(x)o(2) gate structure
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7396413/
https://www.ncbi.nlm.nih.gov/pubmed/32743764
http://dx.doi.org/10.1186/s11671-020-03384-z
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