The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O(2)/He Plasmas for Thermopile Devices

Heavily doped polysilicon layers have been widely used in the fabrication of microelectromechanical systems (MEMS). However, the investigation of high selectivity, anisotropy, and excellent uniformity of heavily doped polysilicon etching is limited. In this work, reactive ion etching of undoped and...

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Detalles Bibliográficos
Autores principales: Zhou, Na, Li, Junjie, Mao, Haiyang, Liu, Hao, Liu, Jinbiao, Gao, Jianfeng, Xiang, Jinjuan, Hu, Yanpeng, Shi, Meng, Ju, Jiaxin, Lei, Yuxiao, Yang, Tao, Li, Junfeng, Wang, Wenwu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579393/
https://www.ncbi.nlm.nih.gov/pubmed/32992794
http://dx.doi.org/10.3390/ma13194278

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