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Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method

The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end...

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Autores principales: Tang, Huansong, Lu, Kuankuan, Xu, Zhuohui, Ning, Honglong, Yao, Dengming, Fu, Xiao, Yang, Huiyun, Luo, Dongxiang, Yao, Rihui, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8465624/
https://www.ncbi.nlm.nih.gov/pubmed/34577688
http://dx.doi.org/10.3390/mi12091044
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author Tang, Huansong
Lu, Kuankuan
Xu, Zhuohui
Ning, Honglong
Yao, Dengming
Fu, Xiao
Yang, Huiyun
Luo, Dongxiang
Yao, Rihui
Peng, Junbiao
author_facet Tang, Huansong
Lu, Kuankuan
Xu, Zhuohui
Ning, Honglong
Yao, Dengming
Fu, Xiao
Yang, Huiyun
Luo, Dongxiang
Yao, Rihui
Peng, Junbiao
author_sort Tang, Huansong
collection PubMed
description The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end of the entire preparation process, which leads to the high-performance device preparation process that takes a lot of time and costs. Therefore, there is a lack of effective methods to optimize the device preparation process. In this paper, the effect of sputtering oxygen partial pressure on the properties of PrIZO thin film was studied, and the quality of PrIZO thin film was quickly evaluated by the microwave photoconductivity decay (µ-PCD) method. The μ-PCD results show that as the oxygen partial pressure increases, the peak first increases and then decreases, while the D value shows the opposite trend. The quality of PrIZO thin film prepared under 10% oxygen partial pressure is optimal due to its low localized defect states. The electric performance of PrIZO TFTs prepared under different oxygen partial pressures is consistent with the μ-PCD results. The optimal PrIZO TFT prepared under 10% oxygen partial pressure exhibits good electric performance with a threshold voltage (V(th)) of 1.9 V, a mobility (µ(sat)) of 24.4 cm(2)·V(−1)·s(−1), an I(on)/I(of)(f) ratio of 2.03 × 10(7), and a subthreshold swing (SS) of 0.14 V·dec(−1).
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spelling pubmed-84656242021-09-27 Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method Tang, Huansong Lu, Kuankuan Xu, Zhuohui Ning, Honglong Yao, Dengming Fu, Xiao Yang, Huiyun Luo, Dongxiang Yao, Rihui Peng, Junbiao Micromachines (Basel) Article The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end of the entire preparation process, which leads to the high-performance device preparation process that takes a lot of time and costs. Therefore, there is a lack of effective methods to optimize the device preparation process. In this paper, the effect of sputtering oxygen partial pressure on the properties of PrIZO thin film was studied, and the quality of PrIZO thin film was quickly evaluated by the microwave photoconductivity decay (µ-PCD) method. The μ-PCD results show that as the oxygen partial pressure increases, the peak first increases and then decreases, while the D value shows the opposite trend. The quality of PrIZO thin film prepared under 10% oxygen partial pressure is optimal due to its low localized defect states. The electric performance of PrIZO TFTs prepared under different oxygen partial pressures is consistent with the μ-PCD results. The optimal PrIZO TFT prepared under 10% oxygen partial pressure exhibits good electric performance with a threshold voltage (V(th)) of 1.9 V, a mobility (µ(sat)) of 24.4 cm(2)·V(−1)·s(−1), an I(on)/I(of)(f) ratio of 2.03 × 10(7), and a subthreshold swing (SS) of 0.14 V·dec(−1). MDPI 2021-08-29 /pmc/articles/PMC8465624/ /pubmed/34577688 http://dx.doi.org/10.3390/mi12091044 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Tang, Huansong
Lu, Kuankuan
Xu, Zhuohui
Ning, Honglong
Yao, Dengming
Fu, Xiao
Yang, Huiyun
Luo, Dongxiang
Yao, Rihui
Peng, Junbiao
Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method
title Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method
title_full Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method
title_fullStr Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method
title_full_unstemmed Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method
title_short Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method
title_sort effect of sputtering oxygen partial pressure on the praseodymium-doped inzno thin film transistor using microwave photoconductivity decay method
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8465624/
https://www.ncbi.nlm.nih.gov/pubmed/34577688
http://dx.doi.org/10.3390/mi12091044
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