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Valence band engineering of GaAsBi for low noise avalanche photodiodes
Avalanche Photodiodes (APDs) are key semiconductor components that amplify weak optical signals via the impact ionization process, but this process’ stochastic nature introduces ‘excess’ noise, limiting the useful signal to noise ratio (or sensitivity) that is practically achievable. The APD materia...
Autores principales: | Liu, Yuchen, Yi, Xin, Bailey, Nicholas J., Zhou, Zhize, Rockett, Thomas B. O., Lim, Leh W., Tan, Chee H., Richards, Robert D., David, John P. R. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8346614/ https://www.ncbi.nlm.nih.gov/pubmed/34362898 http://dx.doi.org/10.1038/s41467-021-24966-0 |
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