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The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wells
Under continuous-wave laser excitation in a lattice-matched In(0.53)Ga(0.47)As/In(0.8)Ga(0.2)As(0.44)P(0.56) multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm compared with 980 nm excitation, as the injected carrier density increases...
Autores principales: | Zou, Yongjie, Esmaielpour, Hamidreza, Suchet, Daniel, Guillemoles, Jean-François, Goodnick, Stephen M. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10076436/ https://www.ncbi.nlm.nih.gov/pubmed/37019968 http://dx.doi.org/10.1038/s41598-023-32125-2 |
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