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A Gd-doped HfO(2) single film for a charge trapping memory device with a large memory window under a low voltage
In this study, a performance-enhanced charge trapping memory device with a Pt/Gd-doped HfO(2)/SiO(2)/Si structure has been investigated, where Gd-doped HfO(2) acts as a charge trapping and blocking layer. The device demonstrates a large memory window of 5.4 V under a ±5 V sweeping voltage (360% of t...
Autores principales: | Shen, Yuxin, Zhang, Zhaohao, Zhang, Qingzhu, Wei, Feng, Yin, Huaxiang, Wei, Qianhui, Men, Kuo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049949/ https://www.ncbi.nlm.nih.gov/pubmed/35492147 http://dx.doi.org/10.1039/d0ra00034e |
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