Cargando…
Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta(2)O(5)-Al(2)O(3) Films Grown on Silicon by Atomic Layer Deposition
Nanolayered Ta(2)O(5)-Al(2)O(3) composite films were grown on n-type silicon by atomic layer deposition (ALD) within the overlapped ALD window of 220–270 °C. Moreover, post-annealing treatment was carried out to eliminate defects and improve film quality. Nanolayered Ta(2)O(5)-Al(2)O(3) composite fi...
Autores principales: | Li, Junpeng, Wu, Jianzhuo, Liu, Junqing, Sun, Jiaming |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399370/ https://www.ncbi.nlm.nih.gov/pubmed/30830448 http://dx.doi.org/10.1186/s11671-019-2907-0 |
Ejemplares similares
-
Structure and Dielectric Property of High-k ZrO(2) Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone
por: Liu, Junqing, et al.
Publicado: (2019) -
Structure and photoluminescence of the TiO(2) films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone
por: Jin, Chunyan, et al.
Publicado: (2015) -
Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition
por: Wang, Aiji, et al.
Publicado: (2015) -
Surface Passivation of Silicon Using HfO(2) Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
por: Zhang, Xiao-Ying, et al.
Publicado: (2017) -
Effects of Annealing Ambient on the Characteristics of LaAlO(3) Films Grown by Atomic Layer Deposition
por: Zhao, Lu, et al.
Publicado: (2017)