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Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN
In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 10(3)–10(5) at the forward to reverse curre...
Autores principales: | Lee, Moonsang, Ahn, Chang Wan, Vu, Thi Kim Oanh, Lee, Hyun Uk, Jeong, Yesul, Hahm, Myung Gwan, Kim, Eun Kyu, Park, Sungsoo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075217/ https://www.ncbi.nlm.nih.gov/pubmed/32050595 http://dx.doi.org/10.3390/nano10020297 |
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